CVD Silicon Carbide

The outstanding properties of Performance Silicon Carbide (SiC) include superior chemical and erosion resistance with phenomenal thermal properties.

Utilising a state-of-the-art Chemical Vapor Deposition (CVD) manufacturing system, Morgan Advanced Materials produces chemical vapor deposition silicon carbide that is superior to any silicon carbide available today.

The High-Productivity Advantages of Performance SiC

Extend the life of your manufacturing equipment, reduce downtime, eliminate contamination and increase yields – specify Performance SiC.

CVD SiC Benefits

• Outperforms traditional materials in chemical and plasma environments
• Lower costs of ownership
• Non-particle generating
• Faster throughputs and cycle times
• Higher yields
• Less downtime
  
  

CVD SiC Features

• Ultra-pure 99.9995%
• Unparalleled wear and corrosion resistance
• Outstanding thermal conductivity
• Thermal shock resistant
• Low CTE
• Dimensional stability
• One of the best stiffness to weight ratios
• Fine grained microstructure
• Non-porous
• Theoretically dense
• Mirror-like surface finishes

Our innovative and industry-leading development techniques have made these stiff, durable and stable materials possible for the most demanding manufacturing environments.

CVD silicon carbide traditionally has been used in semiconductor processing applications, such as RTP and oxide etch chamber components, which can take advantage of the excellent thermal shock resistance of silicon carbide and its resistance to erosion by high energy plasmas.

Performance SiC, conductive CVD silicon carbide gives equipment manufacturers new options for materials to use in the processing chamber. The benefits of CVD silicon carbide-purity, stiffness, chemical and oxidation resistance, ability to withstand thermal shock, and dimensional stability—now combine with low electrical resistance, opening up the door to new ways to process wafers.

Heating elements and susceptors made of low resistivity Performance SiC may improve heating uniformity inside the processing chamber. Other ways it may benefit the industry include chambers or liners with improved in situ clean uniformities, sputter targets, and all types of electrodes. Since CVD silicon carbide can be used in very thin sections, its low mass can improve throughput while it improves the use of space in crowded processing tools.

We believe low resistivity CVD silicon carbide will revolutionise the deposition and etch processes. With a combination of suitability for use in a wafer processing chamber and its electrical conductivity, this material opens up new ways to get energy to the wafer. Low resistivity Performance SiC is theoretically dense, intrinsically pure, has a high degree of chemical and process inertness, and has a bulk resistivity of less than 0.1 ohm-cm.

Our low resistivity silicon carbide has consistent properties and is ideal for susceptors, processing chambers, gas distribution plates, edge rings, heaters, electrostatic chucks, or any application that requires electrical conductivity, wear resistance, and thermal shock resistance.