Silicon Carbide (SiC)

Silicon carbide is formed in two ways, reaction bonding and sintering. Each forming method greatly affects the end microstructure.

Reaction bonded SiC is made by infiltrating compacts made of mixtures of SiC and carbon with liquid silicon. The silicon reacts with the carbon forming more SiC which bonds the initial SiC particles.

Sintered SiC is produced from pure SiC powder with non-oxide sintering aids. Conventional ceramic forming processes are used and the material is sintered in an inert atmosphere at temperatures up to 2000ºC or higher.

Both forms of silicon carbide (SiC) are highly wear resistant with good mechanical properties, including high temperature strength and thermal shock resistance. Our engineers are always available to best advise you on the strengths and weaknesses of each ceramic for your particular needs.

Silicon Carbide Characteristics

• Low density
• High strength
• Good high temperature strength (reaction bonded)
• Oxidation resistance (reaction bonded)
• Excellent thermal shock resistance
• High hardness and wear resistance
• Excellent chemical resistance
• Low thermal expansion and high thermal conductivity
  
  

Silicon Carbide Applications 

• Fixed and moving turbine components
• Seals, bearings, pump vanes
• Ball valve parts
• Wear plates
• Kiln furniture
• Heat exchangers
• Semiconductor wafer processing equipment