Ultra Pure Silicon Carbide Plates

Ultra-pure Performance SiC and Low Resistivity Performance SiC outlasts conventional materials – including other forms of silicon carbide – in today’s hostile manufacturing environments.

The outstanding properties of our 99.999% pure monolithic Silicon Carbide material include high thermal conductivity, extremely low levels of impurities, low electrical resistivity, increased opacity and high resistance to chemical erosion. This material is excellent as a base material to make parts for various applications such as wafer carriers, susceptors, RTP edge rings, sputtering targets and heating elements for the Semiconductor Industry.

Performance CVD SiC dissipates heat very well and provides durable stiff substrates for high temperature semiconductor processing. We are able to manufacture SiC plates up to 13" x 20" with a standard thickness of 0.250". Extensive plate production assures the customer that common sizes are available for immediate delivery. Additional sizes and thicknesses are also available.

Ultra Pure Silicon Carbide Plates Provide

• Large plate capability
• Purity and grain size consistency
• Quick turn capability and precision grinding
  
  

We can also manufacture components from this material in sizes up to 450mm x 450mm, with thicknesses ranging from 0.5mm – 10mm thick.

Our industry leading technical ceramic engineers will work closely with customers to provide a product that meets their exacting standards.